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DRV425专为单轴磁场感测需要快速切换频率的应用,而设计,可实现电气隔离式高灵敏度精密直流和交流磁场测量。该器件可提供独特且专有的集成磁通门传感器(IFG)。该传感器内置一个补偿线圈,支持±2mT的高精度感测范围,测量带宽最高可达47kHz。该传感器的低偏移,低漂移,低噪声特性与内部补偿线圈的精确增益,低增益漂移和极低非线性度相结合,可提供无与伦比的磁场测量精度.DRV425输出与感测到的场强成正比的模拟信号。
DRV425提供了一组完整采用,包括内部差分放大器,片上精密基准以及诊断功能,能够最大限度地减少组件数量并削减系统级成本。
DRV425采用带有PowerPAD的耐热增强型,无磁性,超薄四方扁平无引线(WQFN)封装来实现优化散热,并且在-40°C至+ 125°C的扩展工业温度范围内额定运行
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Operating Temperature Range (C) |
Vs (Min) (V) |
Vs (Max) (V) |
Package Group |
Package Size: mm2:W x L (PKG) |
Offset Voltage (+/-) (uV) |
Offset Drift (Max) (uV/C) |
Gain Error (+/-) (Max) (%) |
Gain Drift (Typ) (ppm/C) |
Rating |
DRV425 | DRV401 | DRV401-EP | DRV401-Q1 | DRV411 | DRV421 |
---|---|---|---|---|---|
-40 to 125 | -40 to 125 | -55 to 125 | -40 to 125 | -40 to 125 | -40 to 125 |
3 | 4.5 | 4.5 | 4.5 | 2.7 | 3 |
5.5 | 5.5 | 5.5 | 5.5 | 5.5 | 5.5 |
QFN | SO PowerPAD VQFN | SO PowerPAD | VQFN | HTSSOP QFN | QFN |
20QFN: 16 mm2: 4 x 4(QFN) | 20SO PowerPAD: 133 mm2: 10.405000000000001 x 12.825(SO PowerPAD) 20VQFN: 25 mm2: 5 x 5(VQFN) | 20SO PowerPAD: 133 mm2: 10.405000000000001 x 12.825(SO PowerPAD) | 20VQFN: 25 mm2: 5 x 5(VQFN) | 20HTSSOP: 42 mm2: 6.4 x 6.5(HTSSOP) 20QFN: 16 mm2: 4 x 4(QFN) | 20QFN: 16 mm2: 4 x 4(QFN) |
75 | 100 | 100 | 100 | 100 | 75 |
2 | 1 | 1 | 2 | 2 | |
0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 |
1 | 0.1 | 0.1 | 0.1 | 1 | 1 |
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