cy62137fv30 mobl® 2兆位（128 K×16）静态RAM

　　The CY62137FV30 is a high performance CMOS staticRAMorganized as 128K words by 16 bits. This device featuresadvanced circuit design to provide ultra lowactive current. This is ideal for providing More Battery Life™ （MoBL®） in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected （CE HIGH or both BLE and BHE are HIGH）。 The input and outputpins （I/O0 through I/O15） are placed in a high impedance state in the following conditions when the device is deselected （CE HIGH）， the outputs are disabled （OE HIGH）， both the Byte High Enable and the Byte Low Enable are disabled （BHE， BLE HIGH）， or during an active write operation （CE LOW and WE LOW）。 Write to the device by taking Chip Enable （CE） and Write Enable （WE） inputs LOW. If Byte Low Enable （BLE） is LOW， then data from I/O pins （I/O0 through I/O7） is written into the location specified on the address pins （A0 through A16）。 If Byte High Enable （BHE） is LOW， then data from I/O pins （I/O8 through I/O15） is written into the location specified on the address pins （A0 through A16）。 Read from the device by taking Chip Enable （CE） and Output Enable （OE） LOW， while forcing the Write Enable （WE） HIGH. If Byte Low Enable （BLE） is LOW， then data from the memory location specified by the address pins appear on I/O0 to I/O7. If Byte High Enable （BHE） is LOW， then data from memory appears on I/O8 to I/O15. See the Truth Table on page 11 for a complete description of read and write modes. For a complete list of related documentation， click here.