cy62136ev30 mobl® 2兆位（128K的×16）静态RAM

　　The CY62136EV30 is a high performance CMOS staticRAMorganized as 128K words by 16 bits. This device featuresadvanced circuit design to provide ultra lowactive current. This is ideal for providing More Battery Life™ （MoBL®） in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected （CE HIGH）。 The input/outputpins （I/O0 through I/O15） are placed in a high impedance state when： deselected （CE HIGH）， outputs are disabled （OE HIGH）， both Byte High Enable and Byte Low Enable are disabled （BHE， BLE HIGH）， or during a write operation （CE LOW and WE LOW）。 Writing to the device is accomplished by taking Chip Enable （CE） and Write Enable （WE） inputs LOW. If Byte Low Enable （BLE） is LOW， then data from I/O pins （I/O0 through I/O7）， is written into the location specified on the address pins （A0 through A16）。 If Byte High Enable （BHE） is LOW， then data from I/O pins （I/O8 through I/O15） is written into the location specified on the address pins （A0 through A16）。 Reading from the device is accomplished by taking Chip Enable （CE） and Output Enable （OE） LOW while forcing the Write Enable （WE） HIGH. If Byte Low Enable （BLE） is LOW， then data from the memory location specified by the address pins appear on I/O0 to I/O7. If Byte High Enable （BHE） is LOW， then data from memory appear on I/O8 to I/O15. See the Truth Table on page 11 for a complete description of read and write modes. For a complete list of related documentation， click here.